advanced power n-channel enhancement mode electronics corp. power mosfet capable of 1.8v gate drive bv dss 20v lower gate charge r ds(on) 22m fast switching performance i d 6.4a rohs compliant & halogen-free description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 90 /w data and specifications subject to change without notice 1 AP2344GN-HF 201211053 halogen-free product parameter rating drain-source voltage 20 gate-source voltage + 8 continuous drain current 3 , v gs @ 4.5v 6.4 continuous drain current 3 , v gs @ 4.5v 5.1 pulsed drain current 1 20 total power dissipation 1.38 -55 to 150 operating junction temperature range -55 to 150 thermal data parameter storage temperature range g d s d g s sot-23 ap2344 series are from advanced power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. it provides the designer with an extreme efficient device for use in a wide range of power applications. the special design sot-23 package with good thermal performance is widel y preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 20 - - v r ds(on) static drain-source on-resistance 2 v gs =4.5v, i d =6a - - 22 m v gs =2.5v, i d =4a - - 32 m v gs =1.8v, i d =2a - - 40 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 0.4 - 1 v i d(on) on state drain current v gs =4.5v, v ds =5v 30 - - a g fs forward transconductance v ds =5v, i d =6a - 27 - s i dss drain-source leakage current v ds =16v, v gs =0v - - 1 ua i gss gate-source leakage v gs =+ 8v, v ds =0v - - + 10 ua q g total gate charge i d =6a - 22 35.2 nc q gs gate-source charge v ds =10v - 2 - nc q gd gate-drain ("miller") charge v gs =4.5v - 6 - nc t d(on) turn-on delay time v ds =10v - 8 - ns t r rise time i d =1a - 11 - ns t d(off) turn-off delay time r g =3.3 -38- ns t f fall time v gs =5v - 7 - ns c iss input capacitance v gs =0v - 1520 2430 pf c oss output capacitance v ds =10v - 175 - pf c rss reverse transfer capacitance f=1.0mhz - 155 - pf r g gate resistance f=1.0mhz - 1.2 2.4 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =1.2a, v gs =0v - - 1.2 v t rr reverse recovery time i s =6a, v gs =0 v , - 16 - ns q rr reverse recovery charge di/dt=100a/s - 8 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.surface mounted on 1 in 2 copper pad of fr4 board, t < 10sec ; 270 /w when mounted on min. copper pad. this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 AP2344GN-HF
AP2344GN-HF fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 10 20 30 0123456 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c 5.0v 4.5v 3.5v 2.5v v g =1.8v 0 10 20 30 012345 v ds , drain-to-source voltage (v) i d , drain current (a) t a =150 o c 5.0v 4.5v 3.5v 2.5v v g =1.8v 0 2 4 6 8 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0 0.4 0.8 1.2 1.6 2 -50 0 50 100 150 t j , junction temperature ( o c ) normalized v gs(th) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =6a v gs =4.5v 16 18 20 22 24 12345 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =2a t a =25 o c i d =1ma
AP2344GN-HF fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. maximum continuous drain fig 12. gate charge waveform current v.s. ambient temperature 4 0 1 2 3 4 5 6 0 8 16 24 32 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =6a v ds =10v 0 400 800 1200 1600 2000 1 5 9 13172125 v ds , drain-to-source voltage (v) c (pf) f =1.0mhz c iss c oss c rss 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) 0.01 0.05 0.1 0.2 duty=0.5 single pulse p dm duty factor = t/t peak t j = p dm x r thja + t a t t rthja = 270 /w 0.02 q v g 4.5v q gs q gd q g charge operation in this area limited by r ds(on) 0 2 4 6 8 25 50 75 100 125 150 t a , ambient temperature ( o c ) i d , drain current (a)
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